Isabella I. Haddad is an attorney at Ruloff, Swain, Haddad, Morecock, Talbert, & Woodward, recognized for her dynamic approach and unwavering commitment to her clients. Specializing in medical malpractice and personal injury law, with a focus on automobile accidents, Isabella brings a fresh perspective to the legal field, driven by a passion for advocating on behalf of those affected by life-altering circumstances.
A Virginia Beach native and the daughter of esteemed attorney Robert J. Haddad, Isabella graduated from Cape Henry Collegiate in 2016 before taking a transformative gap year. During this time, she gained invaluable experience working in an orphanage in Thailand and participated in medical missions with Operation Smile in Vietnam and India. In 2017, she also contributed as a student volunteer in Operation Smile’s International Student Leadership Program in Rome, fostering her deep commitment to advocacy and service.
Isabella pursued her undergraduate degree at Virginia Tech, graduating in 2021, while simultaneously balancing a role as a nanny for five children—a responsibility that sharpened her multitasking abilities and reinforced her desire to support and uplift others. In May 2024, she earned her law degree from the University of Wyoming College of Law and had already passed the Virginia Bar Exam while still in school, showcasing her early drive and dedication.
Her practice areas reflect her passion for helping individuals navigate complex legal challenges, with a particular focus on those facing personal injury and medical malpractice cases. Isabella’s hardworking, energetic, and client-centered approach positions her as a promising advocate in the legal community.
Outside of the office, Isabella enjoys traveling, engaging in community service, and spending time with friends and family. She is committed to empowering her clients, ensuring they feel supported and understood throughout their legal journeys. With her enthusiasm and dedication, Isabella is poised to make a meaningful impact in the legal field.
